BSS138NH6327XTSA2 vs 2N7002H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138NH6327XTSA2 disebabkan oleh Infineon dan 2N7002H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS138NH6327XTSA2 2N7002H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Kemasan PG-SOT-23 (3-pin) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] -55C to +150C (Tj)
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Boson Bebas Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
Jenis Transistor — N-Channel MOSFET
Technology — OptiMOS (Planar)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 300 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Channel Mode — Enhancement
Aras MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Lead-Free — Yes
Qualification — Industrial / Commercial Grade

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