BSS138NH6327XTSA2 vs BSS83PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS138NH6327XTSA2 dari Infineon dan BSS83PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS138NH6327XTSA2 | BSS83PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 60 V | — |
| R_DS(on) max @ V_GS=10V | 3.5 ohm | — |
| Continuous Drain Current (Ta) | 230 mA | — |
| Power Dissipation (Ta) | 360 mW | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: typical V_GS(th) value] | — |
| Paket | PG-SOT-23 (3-pin) | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj max and operating range] | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| dv/dt Rated | Yes | — |
| Bebas Halogen | Yes (per IEC 61249-2-21) | — |
| RoHS Compliance | Compliant | — |
| AEC-Q101 Qualification | Qualified | — |
| Lead Plating | Pb-free | — |
| Marking Code | [DATA_NEEDED: top-side marking code] | — |
| Packaging | Tape and Reel | — |
| FET Type | — | P-Channel |
| Technology | — | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TA=25C | — | 330 mA |
| Pulsed Drain Current (IDM) | — | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | — | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at TA=25C | — | 360 mW |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Qualification | — | Automotive grade per Infineon |
| Process Technology | — | SIPMOS / OptiMOS |
| Status RoHS | — | Compliant |