BSS138NH6327XTSA2 vs BSS83PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138NH6327XTSA2 disebabkan oleh Infineon dan BSS83PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS83PH6327XTSA1 BSS83PH6327XTSA1 - 60V P-Channel MOSFET 330mA | Infineon

BSS83PH6327XTSA1 - 60V P-Channel MOSFET 330mA | Infineon

BSS83PH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS138NH6327XTSA2 BSS83PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Kemasan PG-SOT-23 (3-pin) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] —
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Boson Bebas Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
FET Type — P-Channel
Technology — MOSFET (Metal-Oxide Semiconductor)
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) at TA=25C — 330 mA
Pulsed Drain Current (IDM) — 1.3 A
Drain-Source On-Resistance (RDS(on)) at VGS=-10V — 2.0 ohm (max)
Gate-Source Threshold Voltage (VGS(th)) — -1 V to -2.5 V (typ)
Gate-Source Voltage (VGS) max — +/- 20 V
Power Dissipation (PD) at TA=25C — 360 mW
Suhu Hubungan Operasi — -55 C to +150 C
Qualification — Automotive grade per Infineon
Process Technology — SIPMOS / OptiMOS
Status RoHS — Compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga