BSS138NH6327XTSA2 vs BSS84PH6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS138NH6327XTSA2 dari Infineon dan BSS84PH6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS138NH6327XTSA2 BSS84PH6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel P-Channel Enhancement Mode
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Paket PG-SOT-23 (3-pin) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj max and operating range] —
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Bebas Halogen Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
Manufacturer — Infineon Technologies
Part Number — BSS84PH6327XTSA2
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
On-State Resistance (RDS(on)) max — 8 ohm at VGS = -10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-to-Source Voltage (VGS) — +/-20 V
Suhu Kerja — -55C to +150C
Qualification — AEC-Q101 (Automotive)
Technology Family — SIPMOS OptiMOS
Status RoHS — Compliant
Lead-Free — Yes

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