BSS138NH6327XTSA2 vs BSS84PH6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138NH6327XTSA2 disebabkan oleh Infineon dan BSS84PH6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS138NH6327XTSA2 BSS84PH6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel P-Channel Enhancement Mode
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Kemasan PG-SOT-23 (3-pin) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] —
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Boson Bebas Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
Manufacturer — Infineon Technologies
Part Number — BSS84PH6327XTSA2
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
On-State Resistance (RDS(on)) max — 8 ohm at VGS = -10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-to-Source Voltage (VGS) — +/-20 V
Suhu Operasi — -55C to +150C
Qualification — AEC-Q101 (Automotive)
Technology Family — SIPMOS OptiMOS
Status RoHS — Compliant
Lead-Free — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga