BSS192PH6327FTSA1 vs BSS127H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS192PH6327FTSA1 dari Infineon dan BSS127H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS192PH6327FTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel SIPMOS, enhancement mode
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 250 V —
Continuous Drain Current (Id) @ 25C 190 mA (Ta) —
Power Dissipation (Pd) 1 W (Ta) —
Drive Voltage (Max Rds On, Min Rds On) 2.8 V, 10 V —
Rds On (Max) @ Id, Vgs [DATA_NEEDED: Rds On max @ Vgs] —
Vgs(th) (Max) [DATA_NEEDED: gate threshold voltage max] —
Vgs(th) (Typ) [DATA_NEEDED: gate threshold voltage typ] —
Paket PG-SOT89 (SOT-89-3, 4-pin 3+Tab) SOT-23-3 (PG-SOT23)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj max / operating temp] —
Automotive Qualification AEC-Q101 (per distributor listing) AEC-Q101
Series SIPMOS Small-Signal-Transistor —
Part Status Active —
Status RoHS [DATA_NEEDED: explicit RoHS status from datasheet] Compliant (lead-free)
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 4.5 V (logic level, rated)
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubung Kerja — -55 C to +150 C
Jumlah Pin — 3
dv/dt Rated — Yes
Bebas Halogen — Yes, per IEC 61249-2-21
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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