BSS205NH6327XTSA1 vs BSS169H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS205NH6327XTSA1 dari Infineon dan BSS169H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS205NH6327XTSA1 BSS169H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS205NH6327XTSA1 —
Tipe Transistor N-Channel MOSFET —
Paket PG-SOT23 (SC-59, TO-236-3), 3-pin PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
Rentang Suhu Kerja -55 °C to +150 °C (junction) [DATA_NEEDED: junction/ambient operating temperature range]
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) —
FET Type — N-Channel Depletion Mode
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
RDS(on) Maximum — 6 Ohm at VGS=0 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute maximum rating]
Gate Threshold Voltage (VGS(th)) — Pinch-off approx. -3.5 V (typical)
Jumlah Pin — 3
Level MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Lead-Free — Yes
Technology — Depletion-mode vertical DMOS
Drain Current at 25C — 170 mA continuous
Typical RDS(on) — [DATA_NEEDED: typical RDS(on) value]

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