BSS205NH6327XTSA1 vs BSS169H6327XTSA1 比較

詳細並排比較 BSS205NH6327XTSA1 由 Infineon 與 BSS169H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ 啟用中
Infineon
BSS169H6327XTSA1 BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon

BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon

BSS169H6327XTSA1 ✓ 啟用中

規格比較

參數 BSS205NH6327XTSA1 BSS169H6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number BSS205NH6327XTSA1 —
電晶體類型 N-Channel MOSFET —
封裝 PG-SOT23 (SC-59, TO-236-3), 3-pin PG-SOT23 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
工作溫度範圍 -55 °C to +150 °C (junction) [DATA_NEEDED: junction/ambient operating temperature range]
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) —
FET Type — N-Channel Depletion Mode
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
RDS(on) Maximum — 6 Ohm at VGS=0 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute maximum rating]
Gate Threshold Voltage (VGS(th)) — Pinch-off approx. -3.5 V (typical)
腳位數 — 3
MSL 等級 — 1 (per JEDEC J-STD-020)
RoHS 狀態 — Compliant
Lead-Free — Yes
Technology — Depletion-mode vertical DMOS
Drain Current at 25C — 170 mA continuous
Typical RDS(on) — [DATA_NEEDED: typical RDS(on) value]

資料表與資源

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