BSS214NH6327XTSA1 vs 2N7002H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS214NH6327XTSA1 dari Infineon dan 2N7002H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS214NH6327XTSA1 2N7002H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 20 V 60 V
Continuous Drain Current (ID) 1.5 A (Ta) 300 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) 250 mOhm at VGS = 4.5 V —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-Source Voltage (VGS max) ±12 V (recommended) —
Technology OptiMOS 2 (planar N-channel) OptiMOS (Planar)
Paket SOT-23 (PG-SOT23), 3 pins PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C (Tj)
Qualification AEC-Q101 (Automotive) Industrial / Commercial Grade
Lead Finish Pb-free lead plating (matte tin) —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
ESD Protection Yes (gate ESD diode) —
Tipe Transistor — N-Channel MOSFET
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Channel Mode — Enhancement
Lead-Free — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon