BSS214NH6327XTSA1 vs 2N7002H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS214NH6327XTSA1 disebabkan oleh Infineon dan 2N7002H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS214NH6327XTSA1 2N7002H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 20 V 60 V
Continuous Drain Current (ID) 1.5 A (Ta) 300 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) 250 mOhm at VGS = 4.5 V —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-Source Voltage (VGS max) ±12 V (recommended) —
Technology OptiMOS 2 (planar N-channel) OptiMOS (Planar)
Kemasan SOT-23 (PG-SOT23), 3 pins PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C (Tj)
Qualification AEC-Q101 (Automotive) Industrial / Commercial Grade
Lead Finish Pb-free lead plating (matte tin) —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
ESD Protection Yes (gate ESD diode) —
Jenis Transistor — N-Channel MOSFET
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Channel Mode — Enhancement
Lead-Free — Yes

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