BSS306NH6327XTSA1 vs BSS214NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS306NH6327XTSA1 dari Infineon dan BSS214NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS306NH6327XTSA1 BSS214NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 2 (planar N-channel)
Drain-Source Voltage (VDS) 30 V 20 V
Continuous Drain Current (ID) 2.3 A (Ta) 1.5 A (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] —
Paket SOT-23 (PG-SOT23), 3-pin SOT-23 (PG-SOT23), 3 pins
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
Lead Plating Pb-free (RoHS compliant) —
Configuration Single N-Channel, 3-pin —
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Rentang Suhu Kerja — -55C to +150C (junction)
Lead Finish — Pb-free lead plating (matte tin)
Status RoHS — Compliant
Level MSL — 1 (per JEDEC J-STD-020)
ESD Protection — Yes (gate ESD diode)

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