BSS306NH6327XTSA1 vs BSS214NH6327XTSA1 比較

詳細並排比較 BSS306NH6327XTSA1 由 Infineon 與 BSS214NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS306NH6327XTSA1 BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 ✓ 啟用中
Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS306NH6327XTSA1 BSS214NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 2 (planar N-channel)
Drain-Source Voltage (VDS) 30 V 20 V
Continuous Drain Current (ID) 2.3 A (Ta) 1.5 A (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] —
封裝 SOT-23 (PG-SOT23), 3-pin SOT-23 (PG-SOT23), 3 pins
安裝類型 Surface Mount Surface Mount
工作溫度 -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
Lead Plating Pb-free (RoHS compliant) —
Configuration Single N-Channel, 3-pin —
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
工作溫度範圍 — -55C to +150C (junction)
Lead Finish — Pb-free lead plating (matte tin)
RoHS 狀態 — Compliant
MSL 等級 — 1 (per JEDEC J-STD-020)
ESD Protection — Yes (gate ESD diode)

資料表與資源

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