BSS306NH6327XTSA1 vs BSS316NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS306NH6327XTSA1 dari Infineon dan BSS316NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS306NH6327XTSA1 BSS316NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) OptiMOS 2 (Trench)
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 2.3 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] —
Paket SOT-23 (PG-SOT23), 3-pin PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) —
Lead Plating Pb-free (RoHS compliant) Pb-free (Matte Tin)
Configuration Single N-Channel, 3-pin —
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Rentang Suhu Hubung Kerja — -55 C to +150 C
Level MSL — MSL1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Automotive Qualification — AEC-Q101 qualified

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