BSS306NH6327XTSA1 vs BSS316NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS306NH6327XTSA1 disebabkan oleh Infineon dan BSS316NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS306NH6327XTSA1 BSS316NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) OptiMOS 2 (Trench)
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 2.3 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] —
Kemasan SOT-23 (PG-SOT23), 3-pin PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) —
Lead Plating Pb-free (RoHS compliant) Pb-free (Matte Tin)
Configuration Single N-Channel, 3-pin —
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Aras MSL — MSL1 (per JEDEC J-STD-020)
Status RoHS — Compliant
Automotive Qualification — AEC-Q101 qualified

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