BSS308PEH6327XTSA1 vs BSS316NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS308PEH6327XTSA1 dari Infineon dan BSS316NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS308PEH6327XTSA1 BSS316NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
Tipe Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
Rentang Suhu Kerja -55 °C to +150 °C —
Paket / Case PG-SOT23 (SOT-23-3) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Qualification AEC-Q101 Automotive —
Status RoHS Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS 2 (Trench)
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Rentang Suhu Hubung Kerja — -55 C to +150 C
Paket — PG-SOT23 (SOT-23-3)
Lead Plating — Pb-free (Matte Tin)
Level MSL — MSL1 (per JEDEC J-STD-020)
Automotive Qualification — AEC-Q101 qualified

Spek dan Sumber

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