BSS308PEH6327XTSA1 vs BSS316NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS308PEH6327XTSA1 disebabkan oleh Infineon dan BSS316NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS308PEH6327XTSA1 BSS316NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
Jenis Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
Gambaran Suhu Operasi -55 °C to +150 °C —
Kemasan / Case PG-SOT23 (SOT-23-3) —
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 —
Qualification AEC-Q101 Automotive —
Status RoHS Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS 2 (Trench)
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Kemasan — PG-SOT23 (SOT-23-3)
Lead Plating — Pb-free (Matte Tin)
Aras MSL — MSL1 (per JEDEC J-STD-020)
Automotive Qualification — AEC-Q101 qualified

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