BSS314PEH6327XTSA1 vs BSS316NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS314PEH6327XTSA1 dari Infineon dan BSS316NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS314PEH6327XTSA1 BSS316NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) OptiMOS 2 (Trench)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) @ TA=25C -1.5 A —
Power Dissipation (PD) @ TA=25C 500 mW —
RDS(on) max @ VGS=-10V 140 mOhm —
RDS(on) max @ VGS=-4.5V [DATA_NEEDED: RDS(on) at -4.5V VGS] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Drive Voltage (max Rds(on)) -4.5 V, -10 V —
Paket PG-SOT23-3 (SOT-23-3) PG-SOT23 (SOT-23-3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (TJ) —
Qualification AEC-Q101 (Automotive) —
Pin Configuration G-D-S (Gate, Drain, Source) —
Level MSL MSL1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
Rentang Suhu Hubung Kerja — -55 C to +150 C
Lead Plating — Pb-free (Matte Tin)
Automotive Qualification — AEC-Q101 qualified

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