BSZ036NE2LSATMA1 vs BSZ065N06LS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSZ036NE2LSATMA1 dari Infineon dan BSZ065N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ036NE2LSATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| Paket | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Rentang Suhu Kerja | -55C to +150C | -55°C to +150°C |
| Level MSL | 1 (Unlimited) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Gate Drive | Logic-level compatible | — |
| Series | — | OptiMOS™ 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 logic-level |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) Max | — | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | — | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6.5 mΩ |
| Power Dissipation (PD) Max | — | 46 W |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 1.8 nF |