BSZ060NE2LSATMA1 vs BSC0504NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ060NE2LSATMA1 dari Infineon dan BSC0504NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ060NE2LSATMA1 BSC0504NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSZ060NE2LSATMA1 —
Technology OptiMOS™ (N-Channel Trench MOSFET) —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) @ Ta=25C 12 A —
Continuous Drain Current (ID) @ Tc=25C 44 A —
Pulsed Drain Current (IDM) 44 A —
On-Resistance RDS(on) max @ VGS=10V 6 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) @ VGS=4.5V] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 26 W —
Rentang Suhu Kerja -55C to +150C [DATA_NEEDED: operating temperature range]
Paket PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TDSON-8-6
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant unknown
Level MSL 1 —
Shipping Packaging Tape & Reel —
Tipe Transistor — N-channel MOSFET
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
Jumlah Pin — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
Tegangan Batas Gerbang — [DATA_NEEDED: gate threshold voltage]
Tahanan Panas — [DATA_NEEDED: thermal resistance]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

Spek dan Sumber

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