BSZ065N03LSATMA1 vs BSC030N03LSGATMA1 Perbandingan
Perbandingan bersamaan detil BSZ065N03LSATMA1 dari Infineon dan BSC030N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ065N03LSATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | OptiMOS 3 |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| Paket / Case | PG-TSDSON-8-FL (S308) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | — |
| Level MSL | 1 | 1 |
| Status RoHS | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | — | 23 A |
| RDS(on) Max @ VGS=10V | — | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | — | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | — | 55 nC |
| Output Charge (Qoss) | — | 66 pF |
| Input Capacitance (Ciss) Typ | — | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | — | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | — | 69 W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Paket | — | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Avalanche Rated | — | Yes (100% tested) |