BSZ070N08LS5ATMA1 vs BSC027N06LS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSZ070N08LS5ATMA1 dari Infineon dan BSC027N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 ✓ Aktif
Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ070N08LS5ATMA1 BSC027N06LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ 5 (80 V logic-level) —
Polarity / Channel Type N-Channel enhancement mode —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TC 74 A (Tc, per datasheet) —
Continuous Drain Current (ID) at TA / Si [DATA_NEEDED: TA-rated ID] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed] [DATA_NEEDED: pulsed IDM]
On-Resistance RDS(on) max @ VGS=10 V 7 mΩ —
On-Resistance RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate Threshold Voltage VGS(th) Logic-level (drive compatible with 4.5 V) —
Total Gate Charge Qg [DATA_NEEDED: total Qg] —
Power Dissition PD max at TC 69 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020, unleaded reflow) —
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Reel Quantity 5000 per 13-inch reel (T&R) —
Series — OptiMOS™ 5
Part Status — Active
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — Logic-level
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
Rentang Suhu Kerja — -55°C to +150°C
Paket / Case — PG-TDSON-8-7 (SuperSO8 5x6)
Jumlah Pin — 8
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

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