BSZ070N08LS5ATMA1 vs BSC027N06LS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ070N08LS5ATMA1 sa pamamagitan ng Infineon at BSC027N06LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 ✓ Nakahanda
Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ070N08LS5ATMA1 BSC027N06LS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ 5 (80 V logic-level) —
Polarity / Channel Type N-Channel enhancement mode —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TC 74 A (Tc, per datasheet) —
Continuous Drain Current (ID) at TA / Si [DATA_NEEDED: TA-rated ID] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed] [DATA_NEEDED: pulsed IDM]
On-Resistance RDS(on) max @ VGS=10 V 7 mΩ —
On-Resistance RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate Threshold Voltage VGS(th) Logic-level (drive compatible with 4.5 V) —
Total Gate Charge Qg [DATA_NEEDED: total Qg] —
Power Dissition PD max at TC 69 W —
Temperature ng Junction na Operasyon -55 °C to +150 °C —
Packhaging PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020, unleaded reflow) —
Tindminan RoHS Compliant Compliant
Avalanche Rated Yes —
Reel Quantity 5000 per 13-inch reel (T&R) —
Series — OptiMOS™ 5
Part Status — Active
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — Logic-level
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
Hanay ng Temperature na Operasyon — -55°C to +150°C
Packhaging / Kaso — PG-TDSON-8-7 (SuperSO8 5x6)
Bilang ng Pin — 8
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

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