BSZ096N10LS5ATMA1 vs BSZ110N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSZ096N10LS5ATMA1 dari Infineon dan BSZ110N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ096N10LS5ATMA1 BSZ110N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS max) 100 V —
Gate-Source Voltage (VGS max) 20 V (typical) —
Continuous Drain Current (ID, TC=25 °C) 40 A —
Maximum Silicon Drain Current (ID max) 62 A —
Pulse Drain Current (ID,pulse) 160 A —
On-Resistance RDS(on) max 9.6 mΩ at VGS=10 V 11 mΩ
Total Power Dissipation (Ptot, TC=25 °C) 69 W —
Gate Threshold Voltage VGS(th) Logic-level (low single-volt range) —
Diode Continuous Forward Current (IS) 40 A (TC=25 °C) —
Diode Forward Voltage (VSD) 0.85 V typ, 1.2 V max at IF=20 A —
Paket PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C (junction) [DATA_NEEDED: operating temperature range]
Technology OptiMOS 5 trench MOSFET OptiMOS 5 N-Channel Power MOSFET
Gate Drive Logic-level compatible —
ESD Protection Yes (gate-integrated) —
Status RoHS Compliant Compliant
Packaging Code ATMA1 (tape and reel) —
Part Family — OptiMOS 5
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Tc — 40 A
Power Dissipation (PD) at Tc — 50 W
Configuration — Single MOSFET
Gate Drive Voltage (VGS) — [DATA_NEEDED: VGS rating]
Level MSL — [DATA_NEEDED: MSL level]

Spek dan Sumber

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