CGD65B240SH2 vs CGD65B200S2 Perbandingan
Perbandingan bersamaan detil CGD65B240SH2 dari Cambridge GaN Devices dan CGD65B200S2 dari Cambridge GaN Devices. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Cambridge GaN Devices
CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
CGD65B240SH2 ✓ AktifCambridge GaN Devices
CGD65B200S2 - 650V 200mΩ ICeGaN™ GaN HEMT | Cambridge GaN Devices
CGD65B200S2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | CGD65B240SH2 | CGD65B200S2 |
|---|---|---|
| Merek | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel GaN HEMT, enhancement mode | — |
| Drain-Source Voltage (V_DS,max) | 650 V | — |
| On-Resistance (R_DS(on)) | 55 mΩ (typical, per datasheet title block) | — |
| Continuous Drain Current (I_D) | 7 A (per DigiKey listing) | [DATA_NEEDED: continuous drain current] |
| Gate Technology | ICeGaN® (gate-injection, 0-20 V drive) | ICeGaN™ (gate input circuit on chip) |
| Current Sense Pin | Yes (integrated, shunt-free) | — |
| NL³ Circuit | Yes (integrated non-linear loss-less circuit) | — |
| Paket | 8-DFN (5x6 mm) surface mount with thermal pad | 8-PowerVDFN (DFN5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Process Technology | GaN-on-silicon (GaN-on-Si) | — |
| Operating Mode | Enhancement mode (normally-off) | Enhancement mode (normally-off) |
| Switching Frequency (typical app) | 200 kHz - 500 kHz (per CGD reference designs) | — |
| Typical Application | 65 W quasi-resonant flyback, PFC, SMPS | — |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Compliance | [DATA_NEEDED: specific RoHS/REACH documentation] | — |
| Part Family | — | ICeGaN™ |
| Device Type | — | Enhancement-mode GaN-on-Si HEMT |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Typical R_DS(on) | — | 200 mΩ |
| Gate Drive (V_GS) | — | 12 V (typical) |
| Material | — | GaN-on-Silicon |
| Polarity | — | N-Channel |
| Reel Variant | — | CGD65B200S2-T13 (Tape & Reel) |
| Status RoHS | — | Compliant |