CGD65B240SH2 vs CGD65B200S2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma CGD65B240SH2 tarafından Cambridge GaN Devices ve CGD65B200S2 tarafından Cambridge GaN DevicesAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Cambridge GaN Devices
CGD65B240SH2 - 650V/55mΩ GaN HEMT ICeGaN® Transistor | CGD
CGD65B240SH2 ✓ AktifCambridge GaN Devices
CGD65B200S2 - 650V 200mΩ ICeGaN™ GaN HEMT | Cambridge GaN Devices
CGD65B200S2 ✓ AktifÖzellik Karşılaştırması
| Parametre | CGD65B240SH2 | CGD65B200S2 |
|---|---|---|
| Marka | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | Transistors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel GaN HEMT, enhancement mode | — |
| Drain-Source Voltage (V_DS,max) | 650 V | — |
| On-Resistance (R_DS(on)) | 55 mΩ (typical, per datasheet title block) | — |
| Continuous Drain Current (I_D) | 7 A (per DigiKey listing) | [DATA_NEEDED: continuous drain current] |
| Gate Technology | ICeGaN® (gate-injection, 0-20 V drive) | ICeGaN™ (gate input circuit on chip) |
| Current Sense Pin | Yes (integrated, shunt-free) | — |
| NL³ Circuit | Yes (integrated non-linear loss-less circuit) | — |
| Paket | 8-DFN (5x6 mm) surface mount with thermal pad | 8-PowerVDFN (DFN5x6) |
| Montaj Türü | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Process Technology | GaN-on-silicon (GaN-on-Si) | — |
| Operating Mode | Enhancement mode (normally-off) | Enhancement mode (normally-off) |
| Switching Frequency (typical app) | 200 kHz - 500 kHz (per CGD reference designs) | — |
| Typical Application | 65 W quasi-resonant flyback, PFC, SMPS | — |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Compliance | [DATA_NEEDED: specific RoHS/REACH documentation] | — |
| Part Family | — | ICeGaN™ |
| Device Type | — | Enhancement-mode GaN-on-Si HEMT |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Typical R_DS(on) | — | 200 mΩ |
| Gate Drive (V_GS) | — | 12 V (typical) |
| Material | — | GaN-on-Silicon |
| Polarity | — | N-Channel |
| Reel Variant | — | CGD65B200S2-T13 (Tape & Reel) |
| RoHS Durumu | — | Compliant |