EP4CE75F29I7N vs EP4CE75F29I7 Perbandingan
Perbandingan bersamaan detil EP4CE75F29I7N dari Intel dan EP4CE75F29I7 dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP4CE75F29I7N | EP4CE75F29I7 |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Cyclone IV E | — |
| Logic Elements (LE) | 75,408 | — |
| Embedded Memory (bits) | 2,810,880 | 2,810,880 |
| Logic Array Blocks (LAB) | 4,633 | — |
| Embedded 18x18 Multipliers | 426 | — |
| PLLs | 4 | 4 |
| Global Clocks | 20 | — |
| Maximum User I/O Pins | 426 | — |
| I/O Banks | 8 | — |
| Paket | 780-ball FBGA (F29) | 780-ball FBGA (FineLine BGA) |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Suhu Kerja | -40C to +100C (Industrial) | -40 °C to +100 °C (Industrial) |
| Core Voltage | 1.2 V | — |
| Process Technology | 60 nm low-k | — |
| Status RoHS | Compliant | Compliant |
| Series | — | Cyclone IV E |
| Manufacturer | — | Intel (formerly Altera) |
| Logic Elements (LEs) | — | 75,408 |
| Embedded Memory Blocks | — | 274 (M9K) |
| Embedded 18×18 Multipliers | — | 200 |
| User I/O Count | — | 426 |
| Process Node | — | 60 nm low-power CMOS |
| Core Voltage (VCCINT) | — | 1.0 V / 1.2 V selectable |
| Configuration Modes | — | JTAG, Active Serial (AS), Passive Serial (PS) |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, SSTL, HSTL |
| External Memory Interfaces | — | DDR/DDR2 SDRAM, QDRII SRAM |
| Level MSL | — | 3 (168 hours) |