EP4CE75F29I7N vs EP4CE75F29I7 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP4CE75F29I7N disebabkan oleh Intel dan EP4CE75F29I7 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP4CE75F29I7N | EP4CE75F29I7 |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Cyclone IV E | — |
| Logic Elements (LE) | 75,408 | — |
| Embedded Memory (bits) | 2,810,880 | 2,810,880 |
| Logic Array Blocks (LAB) | 4,633 | — |
| Embedded 18x18 Multipliers | 426 | — |
| PLLs | 4 | 4 |
| Global Clocks | 20 | — |
| Maximum User I/O Pins | 426 | — |
| I/O Banks | 8 | — |
| Kemasan | 780-ball FBGA (F29) | 780-ball FBGA (FineLine BGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Suhu Operasi | -40C to +100C (Industrial) | -40 °C to +100 °C (Industrial) |
| Core Voltage | 1.2 V | — |
| Process Technology | 60 nm low-k | — |
| Status RoHS | Compliant | Compliant |
| Series | — | Cyclone IV E |
| Manufacturer | — | Intel (formerly Altera) |
| Logic Elements (LEs) | — | 75,408 |
| Embedded Memory Blocks | — | 274 (M9K) |
| Embedded 18×18 Multipliers | — | 200 |
| User I/O Count | — | 426 |
| Process Node | — | 60 nm low-power CMOS |
| Core Voltage (VCCINT) | — | 1.0 V / 1.2 V selectable |
| Configuration Modes | — | JTAG, Active Serial (AS), Passive Serial (PS) |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, SSTL, HSTL |
| External Memory Interfaces | — | DDR/DDR2 SDRAM, QDRII SRAM |
| Aras MSL | — | 3 (168 hours) |