H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-VKC Perbandingan

Perbandingan bersamaan detil H5AN4G8NBJR-UHCR dari SK hynix dan H5AN4G8NBJR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ Aktif
SK hynix
H5AN4G8NBJR-VKC H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN4G8NBJR-UHCR H5AN4G8NBJR-VKC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
Organisasi 512M x 8 —
Speed Grade UH (DDR4-2400 class, PC2400) —
Tegangan Pemuat 1.2 V (VDD) —
Antarmuka DDR4 SSTL12 —
Internal Prefetch 8n —
Paket 78-ball FBGA (11 mm x 7.5 mm) FBGA-78 (7.5 x 11 mm)
Tipe Mounting Surface Mount (BGA solder-down) Surface Mount
Operating Case Temperature -40C to +85C (industrial range) —
Extended Temperature Range Up to +95C case temperature (per datasheet conditions) —
Lead Free Yes —
Bebas Halogen Yes —
Status RoHS Compliant Compliant (Lead-Free & Halogen-Free per datasheet)
Packaging Suffix -R = Tape and Reel —
Refresh [DATA_NEEDED: refresh rate 1x/2x specification] [DATA_NEEDED: refresh rate]
Latensi CAS [DATA_NEEDED: CL value for UH grade] [DATA_NEEDED: CAS latency for 2666 grade]
Ukuran Memori — 4 Gb
Memory Organization — 512M x8
Laju Data — 2666 Mbps (DDR4-2666)
Memory Interface — Parallel
Supply Voltage (VDD) — 1.2 V
Technology — CMOS DRAM
Volatile / Non-Volatile — Volatile
Suhu Kerja — [DATA_NEEDED: operating temperature range]
Packaging — Tray
Status Lingkungan Hidup — Active

Spek dan Sumber

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