H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-UHCR disebabkan oleh SK hynix dan H5AN4G8NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-UHCR | H5AN4G8NBJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | — |
| Speed Grade | UH (DDR4-2400 class, PC2400) | — |
| Tegangan Pemberi Arus | 1.2 V (VDD) | — |
| Antaramuka | DDR4 SSTL12 | — |
| Internal Prefetch | 8n | — |
| Kemasan | 78-ball FBGA (11 mm x 7.5 mm) | FBGA-78 (7.5 x 11 mm) |
| Jenis Pemasangan | Surface Mount (BGA solder-down) | Surface Mount |
| Operating Case Temperature | -40C to +85C (industrial range) | — |
| Extended Temperature Range | Up to +95C case temperature (per datasheet conditions) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging Suffix | -R = Tape and Reel | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x specification] | [DATA_NEEDED: refresh rate] |
| Latensi CAS | [DATA_NEEDED: CL value for UH grade] | [DATA_NEEDED: CAS latency for 2666 grade] |
| Saiz Ingatan | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Kadar Data | — | 2666 Mbps (DDR4-2666) |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | Tray |
| Status Lingkungan Hidup | — | Active |