H5AN4G8NBJR-UHI vs H5AN4G8NBJR-PBC Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-UHI dari SK hynix dan H5AN4G8NBJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-UHI | H5AN4G8NBJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | PBC |
| Supply Voltage (VDD) | 1.2 V | — |
| Paket | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Laju Data | 2400 MT/s | — |
| Antarmuka | JEDEC DDR4 SDRAM | — |
| Bank Architecture | DDR4 bank group architecture | — |
| Refresh | Self-refresh and auto-refresh support | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
| Termination | On-die termination (ODT) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Density | — | 4 Gbit |
| Tipe Antarmuka | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Bebas Halogen | — | Yes |