H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-UHI Perbandingan

Perbandingan bersamaan detil H5AN4G8NBJR-VKIR dari SK hynix dan H5AN4G8NBJR-UHI dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ Aktif
SK hynix
H5AN4G8NBJR-UHI H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix

H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix

H5AN4G8NBJR-UHI ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN4G8NBJR-VKIR H5AN4G8NBJR-UHI
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gbit
Organisasi 512M x 8 512M x 8
Laju Data 2666 Mbps per pin 2400 MT/s
Supply Voltage (VDD) 1.2 V 1.2 V
Paket 78-ball FBGA FBGA-78 (78-ball fine-pitch BGA)
Tipe Mounting Surface Mount Surface Mount
Operating Temperature (Industrial) -40C to +85C (case) —
Extended Temperature Range +85C to +95C (case, per datasheet conditions) —
Technology CMOS DRAM —
Product Family H5AN4G4/6/8NBJR series —
Speed Grade Code -VKI —
Packing Suffix R (Tape & Reel) —
VPP Supply [DATA_NEEDED: VPP supply voltage] —
Latensi CAS [DATA_NEEDED: CAS latency] [DATA_NEEDED: CAS latency at DDR4-2400]
Package Dimensions [DATA_NEEDED: package dimensions] —
Refresh [DATA_NEEDED: refresh interval specification] Self-refresh and auto-refresh support
Speed Grade — DDR4-2400 (PC4-19200)
Grade — Industrial (-UHI suffix)
Antarmuka — JEDEC DDR4 SDRAM
Bank Architecture — DDR4 bank group architecture
Termination — On-die termination (ODT)
Suhu Kerja — [DATA_NEEDED: operating temperature range]
Status RoHS — [DATA_NEEDED: RoHS status]
Level MSL — [DATA_NEEDED: moisture sensitivity level]

Spek dan Sumber

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