H5AN8G8NAFR-VKC vs K4A8G085WC-BCWE Perbandingan
Perbandingan bersamaan detil H5AN8G8NAFR-VKC dari SK hynix dan K4A8G085WC-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G8NAFR-VKC | K4A8G085WC-BCWE |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $7,38 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Antarmuka | SSTL12 | DDR4 (parallel, double data rate) |
| Burst Length | 8 (BL8) | — |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | DDR4 bank groups (8n prefetch) |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Paket | 78-ball FBGA | 78FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (per JLCPCB listing) |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Laju Data | — | 3200 Mbps (DDR4-3200) |
| Tegangan Pemuat | — | 1.2 V |
| Application Class | — | Computing / Embedded main memory |
| Manufacturer | — | Samsung Electronics |
| Speed Bin Suffix | — | -BCWE (DDR4-3200, commercial temp) |
| Refresh | — | Standard DDR4 refresh mechanisms |
| On-Die Termination | — | Yes (DDR4 ODT) |