H5AN8G8NCJR-RDC vs MT40A1G8AG-062E Perbandingan

Perbandingan bersamaan detil H5AN8G8NCJR-RDC dari SK hynix dan MT40A1G8AG-062E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN8G8NCJR-RDC H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC ✓ Aktif
Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN8G8NCJR-RDC MT40A1G8AG-062E
Merek SK hynix Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 8 Gb (1 GB) —
Organisasi x8 1G x 8
Laju Data up to 2666 Mbps —
Tegangan Pemuat 1.2 V (VDD) —
Antarmuka DDR4 (JEDEC standard) Parallel
Bank Architecture 4 bank groups x 4 banks —
Burst Length BL8 —
Paket 78-ball FBGA 78-FBGA (7.5 x 11 mm)
Tipe Mounting Surface Mount Surface Mount (BGA)
Suhu Kerja [DATA_NEEDED: operating temperature range for -RDC suffix] —
Latensi CAS [DATA_NEEDED: CAS latency for -RDC speed grade] —
Generation C-die family (NCJR) —
Lead Free Yes —
Bebas Halogen Yes —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Ukuran Memori — 8 Gbit
Clock Frequency — 1.6 GHz (DDR4-3200, 3200 MT/s data rate)
Clock Cycle Time — 19 ns class (-062E speed grade)
Supply Voltage (VDD) — 1.2 V
Temperature Grade — Automotive (AUT)
Access Time (CAS Latency class) — DDR4-3200 timing class (tAA per datasheet)
Bank Group Architecture — Yes (DDR4 bank groups)
Termination — On-Die Termination (ODT)
CA Parity — Supported (DDR4 command/address parity)
Packaging Option — Tape and Reel (TR / :R suffix)
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Refresh Rate — [DATA_NEEDED: refresh rate]

Spek dan Sumber

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