H5AN8G8NCJR-RDC vs MT40A1G8AG-062E 比較
詳細並排比較 H5AN8G8NCJR-RDC 由 SK hynix 與 MT40A1G8AG-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-RDC | MT40A1G8AG-062E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | — |
| 組織 | x8 | 1G x 8 |
| 資料速率 | up to 2666 Mbps | — |
| 供應電壓 | 1.2 V (VDD) | — |
| 介面 | DDR4 (JEDEC standard) | Parallel |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| 封裝 | 78-ball FBGA | 78-FBGA (7.5 x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 工作溫度 | [DATA_NEEDED: operating temperature range for -RDC suffix] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| 無鹵素 | Yes | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| 記憶體容量 | — | 8 Gbit |
| Clock Frequency | — | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) |
| Clock Cycle Time | — | 19 ns class (-062E speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Temperature Grade | — | Automotive (AUT) |
| Access Time (CAS Latency class) | — | DDR4-3200 timing class (tAA per datasheet) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| Termination | — | On-Die Termination (ODT) |
| CA Parity | — | Supported (DDR4 command/address parity) |
| Packaging Option | — | Tape and Reel (TR / :R suffix) |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |