H5AN8G8NCJR-UHC vs H5AN8G8NCJR-PBC Perbandingan
Perbandingan bersamaan detil H5AN8G8NCJR-UHC dari SK hynix dan H5AN8G8NCJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G8NCJR-UHC | H5AN8G8NCJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | 1G x 8 (x8) |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Paket | FBGA-78 | 78-ball FBGA |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS Code | Yes | — |
| REACH Compliance | Yes (per distributor record) | — |
| Lead-Free | Yes (family documented as Lead-Free & Halogen-Free) | — |
| Bebas Halogen | Yes | — |
| Part Life Cycle Code | Active | — |
| Access Type | Synchronous, both clock edges (DDR) | — |
| Memory Configuration | Bank-group architecture DDR4 | — |
| Die Revision | CJR (C-die family) | — |
| Manufacturer | SK hynix Inc. | — |
| Ukuran Memori | — | 8 Gb (1 GB) |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Laju Data | — | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| Fitur | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Status RoHS | — | Lead-Free & Halogen-Free |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |