H5ANAG6NBJR-UHC vs H5ANAG6NBJR-RDC Perbandingan

Perbandingan bersamaan detil H5ANAG6NBJR-UHC dari SK hynix dan H5ANAG6NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5ANAG6NBJR-UHC H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC ✓ Aktif
SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5ANAG6NBJR-UHC H5ANAG6NBJR-RDC
Merek SK hynix SK hynix
Kategori DRAM DRAM
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 16 Gb
Organisasi 256M x 16 —
Antarmuka DDR4 (CMOS) Synchronous, double data rate
Paket PBGA96 / FBGA-96 (TFBGA) FBGA (Ball Grid Array), surface mount
Package Dimensions 13 mm length (per JESD-30 R-PBGA-B96) —
Access Mode Multi Bank, Page Burst —
Suhu Kerja -40C to +95C [DATA_NEEDED: Operating Temperature Range]
Refresh Auto / Self Refresh —
Data Mask Supported (DM function) —
Asynchronous Reset Supported —
On-Chip Termination Dynamic ODT —
ZQ Calibration Supported —
Write Leveling Supported —
CRC Supported —
Supply Voltage Class DDR4 (1.2 V class) —
Status RoHS RoHS Compliant [DATA_NEEDED: RoHS Status]
REACH Compliance Compliant —
ECCN EAR99 —
HTS Code 8542.32.00.36 —
Latensi CAS [DATA_NEEDED: CAS Latency] —
Max Data Rate [DATA_NEEDED: Max Data Rate] —
Memory Organization — 16Gb x16
Laju Data — 2666 Mbps (speed grade -RDC)
Supply Voltage (VDD) — 1.2 V
Clocking — Fully synchronous to both clock edges
Tipe Mounting — Surface Mount
Technology — CMOS
Standard — JEDEC DDR4 SDRAM
Application — Main memory
On-Die Termination (ODT) — Supported (DDR4 feature)
Bank Group Architecture — DDR4 bank groups (per JEDEC DDR4)

Spek dan Sumber

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