H5ANAG6NCJR-XN vs H5ANAG6NCMR-XNI Perbandingan
Perbandingan bersamaan detil H5ANAG6NCJR-XN dari SK hynix dan H5ANAG6NCMR-XNI dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG6NCJR-XN | H5ANAG6NCMR-XNI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 16 Gbit (1G x 16) | — |
| Organisasi | 1G x 16 | — |
| Laju Data | 3200 Mbps/pin (DDR4-3200) | 3200 Mbps (DDR4-3200, XN speed bin) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Paket | FBGA-96 (96-ball) | FBGA-96 |
| Package Width | 8 mm | — |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC (Command/Address) | Yes | — |
| Write Leveling | Yes | — |
| Maximum Standby Current | 0.074 A (per Vyrian listing) | — |
| Status RoHS | Compliant | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Latensi CAS | [DATA_NEEDED: CAS latency for -XN speed grade] | — |
| Ukuran Memori | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Tegangan Pemuat | — | 1.2 V |
| Technology | — | CMOS Double Data Rate IV Synchronous DRAM |
| Power Class | — | Normal Power |
| Antarmuka | — | Parallel (DDR4) |
| Product Status | — | Active |
| Application Domain | — | Main memory, industrial controllers, computing modules, consumer electronics |
| Memory Format | — | DRAM |
| Speed Bin Family | — | UH/VK/WM/XN |
| VPP Supply Voltage | — | [DATA_NEEDED: VPP Supply Voltage] |
| Level MSL | — | [DATA_NEEDED: MSL Level] |