H5ANAG6NCR-UHC vs H5ANAG6NCJR-XN Perbandingan

Perbandingan bersamaan detil H5ANAG6NCR-UHC dari SK hynix dan H5ANAG6NCJR-XN dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum H5ANAG6NCR-UHC H5ANAG6NCJR-XN
Merek SK hynix SK hynix
Kategori Mobile LPDDR4 Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Memory Density 16 Gb (2 GB) —
Organisasi 1G x 16 1G x 16
Antarmuka CMOS, Double Data Rate IV —
Paket FBGA-96 (PBGA-96) FBGA-96 (96-ball)
Die Revision C —
Speed Grade [DATA_NEEDED: Speed grade / data rate] —
Supply Voltage (VDD) [DATA_NEEDED: VDD voltage] 1.14 V to 1.26 V
Suhu Kerja [DATA_NEEDED: Operating temperature range] [DATA_NEEDED: operating temperature range]
Configuration 1 Channel, 1 Rank —
Refresh [DATA_NEEDED: Refresh scheme] —
Tipe Mounting Surface Mount Surface Mount (BGA)
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Factory Packing Quantity [DATA_NEEDED: Standard packing quantity] —
Application Main memory, embedded computing, industrial controllers —
Density — 16 Gbit (1G x 16)
Laju Data — 3200 Mbps/pin (DDR4-3200)
Package Width — 8 mm
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC (Command/Address) — Yes
Write Leveling — Yes
Maximum Standby Current — 0.074 A (per Vyrian listing)
Latensi CAS — [DATA_NEEDED: CAS latency for -XN speed grade]

Spek dan Sumber

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