H5ANAG8NBJR-VKC vs K4AAG085WM-BCTD Perbandingan
Perbandingan bersamaan detil H5ANAG8NBJR-VKC dari SK hynix dan K4AAG085WM-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG8NBJR-VKC | K4AAG085WM-BCTD |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $9,95 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Organisasi | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | DDR4-2666 |
| Tegangan Pemuat | 1.14 V to 1.26 V (VDDQ) | 1.2 V |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| Paket | FBGA-78 | FBGA-78 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Status RoHS | Compliant, Lead-Free and Halogen-Free | [DATA_NEEDED: RoHS status] |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Ukuran Memori | — | 16 Gb |
| Tipe Antarmuka | — | Parallel (DDR4) |
| Clock Rate | — | 1333 MHz |
| Laju Data | — | 2666 MT/s |
| Bank Group Architecture | — | DDR4 bank groups |
| Density Class | — | 16 Gbit monolithic DRAM |
| Application Class | — | Industrial / embedded memory |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |