IAUC100N04S6N015ATMA1 vs BSC014N04LSATMA1 Perbandingan
Perbandingan bersamaan detil IAUC100N04S6N015ATMA1 dari Infineon dan BSC014N04LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUC100N04S6N015ATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | — |
| Technology | N-Channel Trench MOSFET | Trench (OptiMOS 5, thin-wafer) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A | — |
| Power Dissipation (P_D @ T_C=25C) | 100 W | — |
| R_DS(on) max @ V_GS=10V | 1.5 mΩ (typical, per Infineon product page) | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Rentang Suhu Kerja | -55 C to +175 C (junction, typical) | -55C to +175C |
| Paket | PG-TDSON-8 (SSO8) 5x6 mm | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (unlimited floor life) | 1 (unlimited) |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Series | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Status RoHS | — | Compliant |