IAUC100N04S6N015ATMA1 vs BSC014N04LSATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6N015ATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6N015ATMA1 IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6N015ATMA1 βœ“ Active
Infineon
BSC014N04LSATMA1 BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N04S6N015ATMA1 BSC014N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-6 40V β€”
Technology N-Channel Trench MOSFET Trench (OptiMOS 5, thin-wafer)
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D @ T_C=25C) 100 A β€”
Power Dissipation (P_D @ T_C=25C) 100 W β€”
R_DS(on) max @ V_GS=10V 1.5 mΞ© (typical, per Infineon product page) β€”
Gate-Source Voltage (V_GS) max Β±20 V β€”
Operating Temperature Range -55 C to +175 C (junction, typical) -55C to +175C
Package PG-TDSON-8 (SSO8) 5x6 mm SuperSO8 (TDSON-8 FL) 5x6 mm
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life) 1 (unlimited)
Automotive Qualification AEC-Q101 β€”
RoHS Compliance Compliant β€”
Lead-Free Yes β€”
Series β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at Ta β€” 32 A
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10 V β€” 1.4 mOhm
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 96 W
Gate-Source Voltage (VGS) max β€” 20 V
RoHS Status β€” Compliant

Datasheets & Resources

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