IAUC120N06S5N032ATMA1 vs ISC015N06NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC120N06S5N032ATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC120N06S5N032ATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Power Dissipation (PD) at TC=25C 94 W —
On-Resistance RDS(on) max at VGS=10V 3.2 mOhm —
Gate Charge (Qg) typ 47 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Technology OptiMOS-5 N-Channel Trench MOSFET (OptiMOS 5)
Rentang Suhu Kerja -55C to +175C (Tj) -55 C to +175 C
Paket PG-TDSON-8-34 (SSO8 5x6 mm) PG-TDSON-8 (PQFN 5x6) Drain-Down
Tipe Mounting Surface Mount (Tape and Reel) Surface Mount
Jumlah Pin 8 —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Gate Resistance (Rg) [DATA_NEEDED: Rg] —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Level MSL MSL 1 (per JEDEC J-STD-020) —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

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IAUC120N06S5N032ATMA1

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