IAUC41N06S5L100ATMA1 vs IAUC28N08S5L230ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC41N06S5L100ATMA1 dari Infineon dan IAUC28N08S5L230ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC41N06S5L100ATMA1 IAUC28N08S5L230ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (Trench MOSFET) OptiMOS-5 Power MOSFET
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tj) 41 A —
Power Dissipation (PD, TC) 42 W —
On-State Resistance (RDS(on)) max 10 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Rentang Suhu Kerja -55C to +175C —
Paket PG-TDSON-8-33 (TDSON-8, 5x6 mm) PG-TDSON-8-33 (5x6 mm SSO8)
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Automotive Qualified Yes (AEC-Q101 automotive grade) Yes (AEC-Q101)
Status RoHS Compliant Compliant
Interconnect Copper clip (low-inductance) —
Manufacturer — Infineon Technologies
Series — OptiMOS-5
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) — 28 A
Pulsed Drain Current (I<sub>DM</sub>) — [DATA_NEEDED: pulsed drain current]
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 23 mΩ (typ)
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) — 2.5 V
Gate Charge (Q<sub>g</sub>, typ) — [DATA_NEEDED: total gate charge]
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 38 W
Suhu Hubung Kerja — -55 °C to +175 °C

Spek dan Sumber

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