IAUC41N06S5L100ATMA1 vs IAUC28N08S5L230ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC41N06S5L100ATMA1 sa pamamagitan ng Infineon at IAUC28N08S5L230ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 ✓ NakahandaInfineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC41N06S5L100ATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS-5 Power MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tj) | 41 A | — |
| Power Dissipation (PD, TC) | 42 W | — |
| On-State Resistance (RDS(on)) max | 10 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Packhaging | PG-TDSON-8-33 (TDSON-8, 5x6 mm) | PG-TDSON-8-33 (5x6 mm SSO8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | Yes (AEC-Q101 automotive grade) | Yes (AEC-Q101) |
| Tindminan RoHS | Compliant | Compliant |
| Interconnect | Copper clip (low-inductance) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | — | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 23 mΩ (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | — | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | — | 38 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |