IAUC60N04S6L030HATMA1 vs BSZ100N03MSGATMA1 Perbandingan
Perbandingan bersamaan detil IAUC60N04S6L030HATMA1 dari Infineon dan BSZ100N03MSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifInfineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC60N04S6L030HATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | Single with built-in body diode |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TSDSON-8 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | — |
| Status RoHS | Compliant | — |
| Level MSL | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Part Family | — | OptiMOS 25V / 30V |
| Tipe Transistor | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA | — | 10 A |
| Continuous Drain Current (ID) at TC | — | 40 A |
| Power Dissipation (PD) at TA | — | 2.1 W |
| Power Dissipation (PD) at TC | — | 30 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet] |
| Technology | — | Trench MOSFET (OptiMOS) |
| Terminal Finish | — | Tin (Pb-free) |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |
| Qualification | — | JEDEC - target application qualified |
| Avalanche Tested | — | 100% (per JEDEC) |
| RoHS Compliance | — | Compliant (Pb-free plating) |
| Bebas Halogen | — | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | — | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | — | [DATA_NEEDED: see datasheet] |