IAUC80N04S6N036ATMA1 vs IAUC60N04S6N044ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC80N04S6N036ATMA1 dari Infineon dan IAUC60N04S6N044ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC80N04S6N036ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS-6 40 V | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at T_C | 80 A | — |
| Power Dissipation (P_D) at T_C | 50 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 3.6 mOhm | — |
| On-Resistance R_DS(on) max at V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Paket | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +175 C | — |
| AEC-Q101 Qualification | Qualified (Automotive) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Terminal Finish | Tin (Sn) (e3 per JESD-609) | — |
| Peak Reflow Temperature | 260 C (per JEDEC J-STD-020) | — |
| Compliance - RoHS | Compliant | — |
| Compliance - REACH | Compliant | — |
| Technology | — | OptiMOS-6 N-channel trench MOSFET |
| Continuous Drain Current (I_D) at Tc=25°C | — | 60 A |
| Continuous Drain Current (I_D) at Tc=100°C | — | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | — | 4.4 mΩ |
| On-Resistance R_DS(on) max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25°C | — | 42 W |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 qualified (IAUC prefix) |
| Status RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |