IAUC90N10S5N062ATMA1 vs BSZ018NE2LSIATMA1 Perbandingan

Perbandingan bersamaan detil IAUC90N10S5N062ATMA1 dari Infineon dan BSZ018NE2LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC90N10S5N062ATMA1 BSZ018NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 25 V
Continuous Drain Current (ID) at Tc=25C 90 A 40 A
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TDSON-8-34 (TDSON-8) PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) OptiMOS (Infineon trench MOSFET)
Avalanche Rated Yes (100% avalanche tested) —
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes Yes
Part Number — BSZ018NE2LSIATMA1
Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 22 A
Pulsed Drain Current (IDM) — 160 A
Typical On-Resistance RDS(on) at VGS=10V — 1.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 69 W
Rentang Suhu Kerja — -55 C to +150 C
Status RoHS — Compliant

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