IAUCN04S6N009TATMA1 vs ISC080N10NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S6N009TATMA1 dari Infineon dan ISC080N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S6N009TATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40 V —
Part Number IAUCN04S6N009T —
Ordering Code (MPN) IAUCN04S6N009TATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, at Tj) 330 A —
Power Dissipation (PD, at Tc) 178 W —
On-Resistance RDS(on) max 0.9 mΩ —
Paket PG-LHDSO-10-2 (SSO10T) PG-TDSON-8 FL (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 6 trench MOSFET —
Automotive Qualification AEC-Q101 —
Lead-Free / RoHS Yes / Compliant —
Gate Threshold VGS(th) typ [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Rentang Suhu Kerja — -55°C to +175°C (TJ max, per datasheet)
Level MSL — 1 (per JEDEC J-STD-020, per datasheet)
Status RoHS — Compliant
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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