IAUCN04S7L042GATMA1 vs IAUCN04S7N019DATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L042GATMA1 dari Infineon dan IAUCN04S7N019DATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L042GATMA1 IAUCN04S7N019DATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 40V —
Technology Trench N-Channel MOSFET OptiMOS 7 40V
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 77 A —
Maximum Power Dissipation (PD, Tc) 50 W —
Paket PG-THSOG-4 (SSO4G 5x6) leaded surface mount PG-TDSON-8-60 (SuperSO8)
Tipe Mounting Surface Mount (IMS substrate / FR4 with thermal vias) Surface Mount
Rentang Suhu Kerja -55C to +175C (Tj) —
Polarity / Channel Type N-Channel enhancement mode —
Automotive Qualified Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) —
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020, family default)
Packing Tape & Reel (per -ATMA1 suffix) —
Target Substrate IMS substrate and legacy FR4 designs —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg @ VGS=10V] —
Configuration — Dual N-Channel (array)
Continuous Drain Current (ID, Tc) — 160 A (Tj)
Power Dissipation (PD, Tc) — 96 W
Suhu Hubung Kerja — -55 C to +175 C
Input Capacitance (Ciss, typ.) — 1.465 nF
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Automotive Qualification — AEC-Q101 (family)
ESD Protection — Yes (gate integrated)

Spek dan Sumber

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