IAUCN04S7L042GATMA1 vs IAUCN04S7N019DATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L042GATMA1 disebabkan oleh Infineon dan IAUCN04S7N019DATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7L042GATMA1 IAUCN04S7N019DATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 40V —
Technology Trench N-Channel MOSFET OptiMOS 7 40V
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 77 A —
Maximum Power Dissipation (PD, Tc) 50 W —
Kemasan PG-THSOG-4 (SSO4G 5x6) leaded surface mount PG-TDSON-8-60 (SuperSO8)
Jenis Pemasangan Surface Mount (IMS substrate / FR4 with thermal vias) Surface Mount
Gambaran Suhu Operasi -55C to +175C (Tj) —
Polarity / Channel Type N-Channel enhancement mode —
Automotive Qualified Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) —
Status RoHS Compliant Compliant
Aras MSL 1 1 (per JEDEC J-STD-020, family default)
Packing Tape & Reel (per -ATMA1 suffix) —
Target Substrate IMS substrate and legacy FR4 designs —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg @ VGS=10V] —
Configuration — Dual N-Channel (array)
Continuous Drain Current (ID, Tc) — 160 A (Tj)
Power Dissipation (PD, Tc) — 96 W
Suhu Hubungan Operasi — -55 C to +175 C
Input Capacitance (Ciss, typ.) — 1.465 nF
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Automotive Qualification — AEC-Q101 (family)
ESD Protection — Yes (gate integrated)

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